| PART |
Description |
Maker |
| SFF250M-1 |
30 AMP 200 VOLTS 00.075 ohm N-Channel Power MOSFET 30 A, 200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| FQD20N06LTF FQD20N06LTM |
17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
|
NEC, Corp.
NEC Corp.
|
| IRFP250N |
N-Channel Power MOSFET 200V, 30A, 0.075-Ohm
|
Fairchild Semiconductor
|
| WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FQU20N06LTU |
60V N-Channel Logic level QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
| APT60M75JVR APT60M75 |
POWER MOS V 600V 62A 0.075 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT60M75L2LL |
POWER MOS 7 600V 73A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| LOB1-R0523FI LOB1-R0221FI LOB1-R022JI LOB1-R00562F |
RESISTOR, 1 W, 1 %, 0.0523 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0221 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.022 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00562 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00604 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0062 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0147 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00523 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0232 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0332 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00576 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0059 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00649 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00698 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0068 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00511 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0422 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.047 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0237 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0133 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0226 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00665 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0357 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00549 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00634 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00619 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0475 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00681 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Welwyn Components, Ltd.
|
| FQD20N06LE FQU20N06LE FQD20N06LETM |
60V N-Channel Logic level QFET (Built in ESD Protection Diode)
60V LOGIC N-Channel MOSFET 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
|
